The implementation methodology of the real effects in a NOI nanostructure, aided by simulation and modelling

1569-190X/$ see front matter 2010 Elsevier B.V doi:10.1016/j.simpat.2010.05.002 * Tel./fax: +4021 4024886. E-mail addresses: [email protected], cr682003 The SOI transistors permanently offer new candidates as nanodevices. The nothing on insulator NOI transistor was recently derived from the nano SOI–MOSFET family. Their output characteristics were theoretical modelled with an exponential law, validated by simulations. The transfer characteristics presented sometimes increasing and others times decreasing monotony. This phenomenon was put directly into a relationship with the gate tunnelling breakdown. This paper has three final targets: the breakdown limitation through the back-gate terminal, the real effects including in the NOI transistor architecture – like interface charges or metal-semiconductor work function and quantum effects corrections in simulations, in order to produce a better correlation between simulations and a real behaviour. These simulations represent a milestone in the NOI nanotransistor manufacturing, establishing some parameters that link the device to the real work regime. 2010 Elsevier B.V. All rights reserved.